Development of 0.35 μm BiCMOS with 50 GHz Fmax bipolar transistors

被引：0
|
作者：
不详
机构：
来源：
INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS | 1998年 / 28卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：251 / 252
页数：2
相关论文
共 50 条
  • [31] Over 300 GHz fT and fmax InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base
    Ida, M
    Kurishima, K
    Watanabe, N
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (12) : 694 - 696
  • [32] CIRCUIT MODELING OF BIPOLAR-TRANSISTORS FOR BICMOS
    DOYLE, DJF
    LANE, WA
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1989, 24 (01) : 189 - 193
  • [33] 12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710 GHz and fMAX=340 GHz -: art. no. 252109
    Hafez, W
    Snodgrass, W
    Feng, M
    APPLIED PHYSICS LETTERS, 2005, 87 (25) : 1 - 3
  • [34] Design of RFICs in 0.35μm Si/SiGe BiCMOS technology for a 5GHz domotic transmitter
    Alimenti, F.
    Borgarino, M.
    Codeluppi, R.
    Palazzari, V.
    Pifferi, M.
    Roselli, L.
    Scorzoni, A.
    Fantini, F.
    2005 EUROPEAN CONFERENCE ON WIRELESS TECHNOLOGIES (ECWT), CONFERENCE PROCEEDINGS, 2005, : 411 - 414
  • [35] A 4.5-5.8 GHz differential LC VCO using 0.35 μm SiGe BiCMOS technology
    Esame, Onur
    Tekin, Ibrahim
    Gurbuz, Yasar
    2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, 2006, : 417 - +
  • [36] Design of RFICs in 0.35μm Si/SiGe BiCMOS technology for a 5GHz domotic transmitter
    Alimenti, F.
    Borgarino, M.
    Codeluppi, R.
    Palazzari, V.
    Pifferi, M.
    Roselli, L.
    Scorzoni, A.
    Fantini, F.
    35th European Microwave Conference, Vols 1-3, Conference Proceedings, 2005, : 1811 - 1814
  • [37] BASIC FIGURES OF MERIT FOR A 1.575 GHZ LOW NOISE AMPLIFIER IN 0.35 μm SiGe BiCMOS TECHNOLOGY
    Djugova, Alena
    Videnovic-Misic, Mirjana
    EUROCON 2009: INTERNATIONAL IEEE CONFERENCE DEVOTED TO THE 150 ANNIVERSARY OF ALEXANDER S. POPOV, VOLS 1- 4, PROCEEDINGS, 2009, : 1225 - 1230
  • [38] A multistandard frequency synthesizer for 5-6 GHz WLAN transceivers in 0.35μm BiCMOS technology
    Boni, A
    Dondi, S
    Facen, A
    2006 IEEE RADIO AND WIRELESS SYMPOSIUM, PROCEEDINGS, 2006, : 455 - 458
  • [39] 400 μm Diameter APD OEIC in 0.35 μm BiCMOS
    Jukic, Tomislav
    Steindl, Bernhard
    Zimmermann, Horst
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2016, 28 (18) : 2004 - 2007
  • [40] 1.7 GHz bipolar optoelectronic receiver using conventional 0.8 μm BiCMOS process
    Halkias, C
    Haralabidis, N
    Kyriakis-Bitzaros, ED
    Katsafouros, S
    ISCAS 2000: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - PROCEEDINGS, VOL V: EMERGING TECHNOLOGIES FOR THE 21ST CENTURY, 2000, : 417 - 420
12345