Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax=425 GHz

被引：15
|
作者：
Lee, S [1 ]
Kim, HJ [1 ]
Urteaga, M [1 ]
Krishnan, S [1 ]
Wei, Y [1 ]
Dahlstrom, M [1 ]
Rodwell, M [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 17期
关键词：
D O I：
10.1049/el:20010728
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) with f(max) = 425 GHz and f(tau) = 141 GHz using transferred-substrate technology are reported. This is the highest reported f(max) for a DHBT. The breakdown voltage BCCEO is 8 V at J(C) = 5 x 10(4) A/cm(2) and the DC current gain beta is 43.
引用
收藏
页码：1096 / 1098
页数：3
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