Boron ion implantation on Al-doped ZnO films for OLEDs transparent conducting electrodes

被引：0

作者：

Hong, Sang-Jin ^{[1
]}

Heo, Gi-Seok ^{[2
]}

Choi, Bum-Ho ^{[2
]}

Shin, Dong-Chan ^{[1
]}

机构：

[1] Chosun Univ, Dept Adv Mat Engn, Kwangju 501759, South Korea

[2] Korea Inst Ind Technol, Gwangju 500460, South Korea

来源：

IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS | 2006年

关键词：

AZO; OLED; TCO; ion implantation; work function; transmittance;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

B+-implanted Al-doped ZnO (AZO) films were fabricated by ion implantation with various ion energies and doses for transparent conducting oxide (TCO) electrodes of organic light-emitting diodes (OLEDs). The resistance of the B+-implanted AZO films was decreased with increasing ion dose. The work function of the implanted films was increased compared to the un-implanted AZO films. All implanted films exhibited high optical transmittance (average transmittance above 87%) in the visible range up to 800nm wavelength. we could control work function, resistance and transmittance individually by changing ion dose and ion energy during implantation.

引用

页码：470 / +

页数：2

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