Boron ion implantation on Al-doped ZnO films for OLEDs transparent conducting electrodes

被引：0
|
作者：
Hong, Sang-Jin [1 ]
Heo, Gi-Seok [2 ]
Choi, Bum-Ho [2 ]
Shin, Dong-Chan [1 ]
机构：
[1] Chosun Univ, Dept Adv Mat Engn, Kwangju 501759, South Korea
[2] Korea Inst Ind Technol, Gwangju 500460, South Korea
来源：
IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS | 2006年
关键词：
AZO; OLED; TCO; ion implantation; work function; transmittance;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
B+-implanted Al-doped ZnO (AZO) films were fabricated by ion implantation with various ion energies and doses for transparent conducting oxide (TCO) electrodes of organic light-emitting diodes (OLEDs). The resistance of the B+-implanted AZO films was decreased with increasing ion dose. The work function of the implanted films was increased compared to the un-implanted AZO films. All implanted films exhibited high optical transmittance (average transmittance above 87%) in the visible range up to 800nm wavelength. we could control work function, resistance and transmittance individually by changing ion dose and ion energy during implantation.
引用
收藏
页码：470 / +
页数：2
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