A high performance of dual-gate TFTs with triple floating N+ channel

被引：0

作者：

Park, Hyung-Seok ^{[1
]}

Lee, Dae Yeon ^{[1
]}

Jung, Min-Chul ^{[1
]}

Hong, Seung-Woo ^{[1
]}

Sung, Man Young ^{[1
]}

Kang, Ey Goo

Rhie, Dong-Hee

机构：

[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

来源：

PROCEEDINGS OF THE TWENTY-FIFTH INTERNATIONAL DISPLAY RESEARCH CONFERENCE - EURODISPLAY 2005 | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have simulated a dual-gate TFT which has triple floating n+ channel to improve the on-current of the dual-gate TFT. We achieved a low hole concentration at the source and channel junction causes the improvement the potential barrier so that we observed the reduction of the kink-effect. In this paper, we observed the reduction of the kink-effect compared with the conventional single-gate TFT and the improvement of the on-current compared with the conventional dual-gate TFT.

引用

页码：448 / 451

页数：4

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