Algorithm and installation for measuring the current lacing voltage in high-power RF and microwave bipolar and heterojunction bipolar transistors

被引：0

作者：

Litvinov, K. A. ^{[1
]}

Radaev, O. A. ^{[2
]}

Kozlikova, I. S. ^{[2
]}

Sergeev, V. A. ^{[1
,2
]}

Kulikov, A. A. ^{[1
]}

机构：

[1] Ulyanovsk State Tech Univ, Ulyanovsk, Russia

[2] Kotelnikov Inst Radioengn & Elect RAS, Ulyanovsk Branch, Ulyanovsk, Russia

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2022年 / 15卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

microwave bipolar transistor; current lacing voltage; non-destructive method; measurement; installation;

D O I：

10.18721/JPM.153.218

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Methods of measuring the current lacing voltage in high-power bipolar (BT) and heterojunction bipolar (HBT) RF and microwave transistors are considered. A method and installation for determining the current lacing voltage in a transistor without introducing the device into the hot spot mode by the steepness of the dependence of the variable component of the voltage at the emitter junction on the collector voltage at a given emitter current and the supply of the sum of linearly increasing and small alternating voltage to the collector is described. A critical drawback of the known methods for determining the voltage of the UKL localization in BT and HBT is that the devices enter the hot spot mode thus the purpose of the work was to develop and experimentally test an algorithm and installation for measuring the voltage of the UKL localization without introducing the device into the hot spot mode.

引用

页码：97 / 101

页数：5

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