Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors

被引：0
|
作者：
Huang, SY [1 ]
Chen, KM [1 ]
Huang, GW [1 ]
Hsu, TL [1 ]
Tseng, HC [1 ]
Chang, CY [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2004年
关键词：
D O I：
10.1109/IPFA.2004.1345589
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hot-carrier (HC) effects on high-frequency and RF power characteristics of Si/SiGe HBTs were investigated in this paper. We found that the small-signal current gain, output power, and power gain of Si/SiGe HBTs are suffered by the HC stress. With different bias conditions, the degradations of cutoff frequency and output power were found to be worse under constant base-current measurement than that under constant collector-current measurement. These phenomena have been explained by the change of the current gain, transconductance, and base-emitter resistance under stress.
引用
收藏
页码：193 / 196
页数：4
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