Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors

被引：6
|
作者：
Huang, SY [1 ]
Chen, KM
Huang, GW
Liang, V
Tseng, HC
Hsu, TL
Chang, CY
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[3] Natl Nano Device Lab, Hsinchu 300, Taiwan
[4] United Microelect Corp, Hsinchu 300, Taiwan
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2005年 / 5卷 / 02期
关键词：
cut-off frequency; hot-carrier effect; linearity; power gain; power-added efficiency; SiGeHBT;
D O I：
10.1109/TDMR.2005.846829
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hot-carrier (HC) effects on high-frequency and RF power characteristics of Si/SiGe HBTs are investigated in this paper. By using the two-tone load-pull measurement, we find that not only the cutoff frequency, but also the output power performances of Si/SiGe HBTs are suffered by the HC stress. In this work, S-parameters and intrinsic elements of an equivalent hybrid-pi model were used to validate the HC effects on high-frequency characteristics. With different bias conditions, the degradations of cutoff frequency, power gain, and linearity are found to be worse under constant base-current measurement than that under constant collector-current measurement. The HC-induced degradations on the current gain, transconductance, and ideality-factor of base and collector currents are analyzed to explain the experimental observations.
引用
收藏
页码：183 / 189
页数：7
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