Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors

被引：0

作者：

Huang, SY ^{[1
]}

Chen, KM ^{[1
]}

Huang, GW ^{[1
]}

Hsu, TL ^{[1
]}

Tseng, HC ^{[1
]}

Chang, CY ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2004年

关键词：

D O I：

10.1109/IPFA.2004.1345589

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot-carrier (HC) effects on high-frequency and RF power characteristics of Si/SiGe HBTs were investigated in this paper. We found that the small-signal current gain, output power, and power gain of Si/SiGe HBTs are suffered by the HC stress. With different bias conditions, the degradations of cutoff frequency and output power were found to be worse under constant base-current measurement than that under constant collector-current measurement. These phenomena have been explained by the change of the current gain, transconductance, and base-emitter resistance under stress.

引用

页码：193 / 196

页数：4

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