共 50 条
- [31] Gas sensing properties of ZnO:Al thin films prepared by RF magnetron sputtering [J]. 2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2006, : 142 - +
- [32] Effect of Ar pressure on properties of ZnO:Al films prepared by RF magnetron sputtering [J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2002, 23 (10): : 1078 - 1082
- [33] Effect of in Doping on Thermoelectric and Magnetoresistive Properties of ZnO Films Prepared by RF Magnetron sputtering [J]. ADVANCED STRUCTURAL AND FUNCTIONAL MATERIALS FOR PROTECTION, 2012, 185 : 37 - +
- [35] Self-texture control of ZnO films prepared by reactive RF magnetron sputtering [J]. MATERIALS AND APPLICATIONS FOR SENSORS AND TRANSDUCERS III, 2014, 605 : 219 - 222
- [37] Textured ZnO thin films by RF magnetron sputtering [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 34 : S343 - S346
- [38] Properties of ITO films prepared by rf magnetron sputtering [J]. Applied Physics A: Materials Science and Processing, 2000, 71 (02): : 157 - 160
- [39] Properties of ITO films prepared by rf magnetron sputtering [J]. Applied Physics A, 2000, 71 (2) : 157 - 160
- [40] Properties of ITO films prepared by rf magnetron sputtering [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 71 (02): : 157 - 160