Growth of GaAs/Ge solar cell by MOVPE

被引：0
|
作者：
Tyagi, R [1 ]
Pal, R [1 ]
Singh, M [1 ]
Bal, M [1 ]
Haldar, T [1 ]
Agarwal, SK [1 ]
Maithani, M [1 ]
机构：
[1] Solid State Phys Lab, Delhi 110054, India
来源：
PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High quality GaAs solar cells have been grown on Ge (100) substrates oriented 9 degrees off towards (110). The growth was carried out using a two step growth process by atmospheric pressure MOVPE system. The grown structures have been characterized for surface morphology and doping profiles using optical microscope and ECV profiler. The V-oc and I-sc of the solar cell was also measured.
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页码：457 / 459
页数：3
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