MOVPE GROWTH OF GAAS GAALAS STRUCTURES ON GAAS AND GE SUBSTRATES FOR SOLAR-CELL DEVICES

被引：7
|
作者：
FLORES, C
BOLLANI, B
CAMPESATO, R
PALETTA, F
PASSONI, D
TIMO, G
TOSONI, A
机构：
[1] CISE Spa, 20090 Segrate
来源：
SOLAR ENERGY MATERIALS | 1991年 / 23卷 / 2-4期
关键词：
D O I：
10.1016/0165-1633(91)90141-7
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
GaAs/GaAlAs multilayer structures were grown by MOVPE on GaAs and Ge substrates to fabricate space solar cells. The cells were characterized in AM0 conditions and in a wide range of temperatures (-185-degrees-C to +50-degrees-C) to simulate the space conditions. Irradiation tests with 1 MeV electrons were also carried out. The GaAs cells grown on GaAs substrates are characterized by an AM0 efficiency of 21.2%; the efficiency reaches 28.6% at -180-degrees-C AM2.
引用
收藏
页码：356 / 362
页数：7
相关论文
共 50 条
  • [1] EPITAXIAL STRUCTURES OF GAAS/GAALAS ON GE SUBSTRATES BY MOVPE FOR PHOTOVOLTAIC APPLICATIONS
    FLORES, C
    BOLLANI, B
    CAMPESATO, R
    PASSONI, D
    TIMO, GL
    [J]. MICROELECTRONIC ENGINEERING, 1992, 18 (1-2) : 175 - 188
  • [2] Growth of GaAs/Ge solar cell by MOVPE
    Tyagi, R
    Pal, R
    Singh, M
    Bal, M
    Haldar, T
    Agarwal, SK
    Maithani, M
    [J]. PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 457 - 459
  • [3] Effect of growth parameters on the MOVPE of GaAs/Ge for solar cell applications
    Agarwal, S
    Tyagi, R
    Singh, M
    Jain, RK
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1999, 59 (1-2) : 19 - 26
  • [4] GROWTH OF POLYCRYSTALLINE GAAS FOR SOLAR-CELL APPLICATIONS
    BLAKESLEE, AE
    VERNON, SM
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (04) : 346 - 352
  • [5] MOVPE GROWTH OF INSB ON GAAS SUBSTRATES
    GRAHAM, RM
    MASON, NJ
    WALKER, PJ
    FRIGO, DM
    GEDRIDGE, RW
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 363 - 370
  • [6] Characterization of InGaAsN solar-cell structures on Ge substrates
    Uesugi, K.
    Kuboya, S.
    Sanorpim, S.
    Onabe, K.
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, 2014, 11 (3-4): : 561 - 564
  • [7] MODELING OF A GAAS-GE MONOLITHIC TANDEM SOLAR-CELL
    HUANG, RT
    GHANDHI, SK
    BORREGO, JM
    [J]. SOLAR ENERGY MATERIALS, 1986, 13 (06): : 469 - 479
  • [8] INTERFACE CONTRIBUTION TO GAAS/GE HETEROJUNCTION SOLAR-CELL EFFICIENCY
    BULLOCK, JN
    WU, CH
    WISE, JF
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (07) : 1238 - 1243
  • [9] A 3-TERMINAL DOUBLE JUNCTION GAAS/GAALAS CASCADE SOLAR-CELL
    FLORES, C
    [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 96 - 99
  • [10] THE GROWTH AND CHARACTERIZATION OF HIGH-QUALITY MOVPE GAAS AND GAALAS
    NAKANISI, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 282 - 294
12345