MOVPE GROWTH OF GAAS GAALAS STRUCTURES ON GAAS AND GE SUBSTRATES FOR SOLAR-CELL DEVICES

被引：7
|
作者：
FLORES, C
BOLLANI, B
CAMPESATO, R
PALETTA, F
PASSONI, D
TIMO, G
TOSONI, A
机构：
[1] CISE Spa, 20090 Segrate
来源：
SOLAR ENERGY MATERIALS | 1991年 / 23卷 / 2-4期
关键词：
D O I：
10.1016/0165-1633(91)90141-7
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
GaAs/GaAlAs multilayer structures were grown by MOVPE on GaAs and Ge substrates to fabricate space solar cells. The cells were characterized in AM0 conditions and in a wide range of temperatures (-185-degrees-C to +50-degrees-C) to simulate the space conditions. Irradiation tests with 1 MeV electrons were also carried out. The GaAs cells grown on GaAs substrates are characterized by an AM0 efficiency of 21.2%; the efficiency reaches 28.6% at -180-degrees-C AM2.
引用
收藏
页码：356 / 362
页数：7
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