Growth and characterization of GaAs nanowires on Ge(111) substrates by selective-area MOVPE

被引：5
|
作者：
Minami, Yusuke [1 ,2 ]
Yoshida, Akinobu [1 ,2 ]
Motohisa, Junichi [1 ,2 ]
Tomioka, Katsuhiro [1 ,2 ]
机构：
[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, North 14 West 9, Sapporo, Hokkaido, Japan
[2] Hokkaido Univ, RCIQE, North 14 West 9, Sapporo, Hokkaido, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2019年 / 506卷
关键词：
Nanostructures; Metalorganic vapor phase epitaxy; Selective epitaxy; Nanomaterials; Semiconducting germanium; Semiconducting III-V materials; SOLAR-CELLS; PHOTOLUMINESCENCE;
D O I：
10.1016/j.jcrysgro.2018.10.009
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report the growth of GaAs nanowires (NWs) on a Ge substrate using selective-area metal-organic vapor phase epitaxy (SA-MOVPE) for solar cell applications. Vertical GaAs NWs were aligned on a non-polar Ge(1 1 1) substrate by implementing As surface treatment and buffer layer growth. The transmission electron microscope (TEM) showed the occurrence of a twin in the NW and no dislocation at the GaAs/Ge interface. Photoluminescence spectra suggested luminescence from a type-II quantum well structure originated from the twin and defect-levels due to Ga vacancies and Ge interdiffusion from the Ge substrate.
引用
收藏
页码：135 / 139
页数：5
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