MOVPE growth of Quantum well GaAs/In0.10GaAs for solar cell applications

被引：0
|
作者：
Wu, Pei-Hsuan [1 ,2 ]
Su, Yan-Kuin [1 ,2 ]
Hong, Hwen-Fen [3 ]
Kuo, Cherng-Tsong [3 ]
机构：
[1] Natl Cheng Kung Univ, Inst Electroopt Sci, 1 Univ Rd, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Engn Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[3] Inst Nucl Energy Res, Taoyuan, Taiwan
来源：
HIGH AND LOW CONCENTRATION FOR SOLAR ELECTRIC APPLICATIONS II | 2007年 / 6649卷
关键词：
multi-quantum well; solar cell; MOVPE; InGaAs;
D O I：
10.1117/12.733593
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A Quantum Well GaAs/In0.10GaAs single junction solar cell, with p-i-n structure, has been fabricated by metal-organic vapor-phase epitaxy (MOVPE). In this letter, we report on the study of a MQW solar cell structure with different thickness of i-layers and pairs of QWs, which was used to extend the absorption region and reduce recombination losses. The efficiency of varied design was discussed accompanying the carrier capture, carrier escape and radiative recombinations in QWs. The optimized design parameters of the solar cell structures were determined. The GaAs/InGaAs QW solar cell is proposed to extend the long-wavelength absorption, as a candidate for the nextgeneration high-efficiency multi-junction solar cell.
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页数：7
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