Photocurrent of hydrogenated nanocrystalline silicon thin film/crystalline silicon heterostructure

被引:20
|
作者
Zhang, R. [1 ,2 ]
Chen, X. Y. [1 ]
Lu, J. J. [1 ]
Shen, W. Z. [1 ]
机构
[1] Shanghai Jiao Tong Univ, Lab Condensed Matter Spectroscopy & Optoelect Phy, Dept Phys, Shanghai 200030, Peoples R China
[2] Shanghai Maritime Univ, Div Basic Courses, Shanghai 200135, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2826742
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the photocurrent properties of the hydrogenated nanocrystalline silicon (nc-Si:H) thin film/crystalline silicon (c-Si) n-p heterostructure. By comparison with the c-Si n-p homojunction, two Gaussian-type photocurrent peaks are observed in the nc-Si:H/c-Si heterostructure and attributed to be transitions from a tail band or discrete levels in quantum dots with localized states, and a miniband with extended states associated with the embedded nanometer crystallites in the amorphous boundaries of the nc-Si:H thin film. The observed strong photocurrent signals and temperature dependency have revealed the unique electronic states of the miniband in the nc-Si:H thin film. Our investigations into the photocurrent properties may help to realize nc-Si:H/c-Si heterostructure-based optoelectronic devices.
引用
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页数:5
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