Conductivity properties of phosphorus-doped hydrogenated nanocrystalline silicon film

被引：0
|
作者：
Liu, M [1 ]
Fu, DF
Wang, Z
Peng, YC
He, YL
机构：
[1] Chinese Acad Sci, Microelect Res & Dev Ctr, Beijing 100029, Peoples R China
[2] Beijing Univ Aeronaut & Astronaut, Dept Appl Phys, Beijing 100083, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 1999年 / 15卷 / 04期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The conductivity of phosphorus-doped hydrogenated nanocrystalline Si (nc-Si:P:H) films is 10(-1) similar to 10(1) Omega(-1).cm(-1), two order of magnitude higher than that of undoped hydrogenated nanocrystalline Si (nc-Si:H) film. A series of conductivity temperature dependence curves show that the kink point temperature almost existing in hydrogenated amorphous Si (a-Si:H) film disappears.
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页码：386 / 386
页数：1
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