Conductivity Properties of Phosphorus-doped Hydrogenated Nanocrystalline Silicon Film

被引：0
|
作者：
Ming LIU(Microelectronics Research and Development Center
机构：
来源：
Journal of Materials Science & Technology | 1999年 / 04期
关键词：
Si; Conductivity Properties of Phosphorus-doped Hydrogenated Nanocrystalline Silicon Film;
D O I：
暂无
中图分类号：
O484 [薄膜物理学];
学科分类号：
080501 ; 1406 ;
摘要：
The conductivity of phosphorus-doped hydrogenated nanocrystalline Si (nc-Si:P:H) films is 10-1 ~ 10 1 Ω-1 .cm-1, two order of magnitude higher than that of undoped hydrogenated nanocrystalline Si (nc-Si：H) film. A series of conductivity temperature dependence curves show that the kink point temperature almost existing in hydrogenated amorphous Si (a-Si:H) filmdisappears.
引用
收藏
页码：386 / 386
页数：1
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