Hysteresis modeling in graphene field effect transistors

被引：9
|
作者：
Winters, M. [1 ]
Sveinbjornsson, E. O. [2 ]
Rorsman, N. [1 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
[2] Univ Iceland, Inst Sci, IS-107 Reykjavik, Iceland
来源：
JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 07期
关键词：
ELECTRONIC TRANSPORT;
D O I：
10.1063/1.4913209
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Graphene field effect transistors with an Al2O3 gate dielectric are fabricated on H-intercalated bilayer graphene grown on semi-insulating 4H-SiC by chemical vapour deposition. DC measurements of the gate voltage nu(g) versus the drain current i(d) reveal a severe hysteresis of clockwise orientation. A capacitive model is used to derive the relationship between the applied gate voltage and the Fermi energy. The electron transport equations are then used to calculate the drain current for a given applied gate voltage. The hysteresis in measured data is then modeled via a modified Preisach kernel. (C) 2015 AIP Publishing LLC.
引用
收藏
页数：9
相关论文
共 50 条
  • [31] Photoinduced Hysteresis of Graphene Field-Effect Transistors Due to Hydrogen-Complexed Defects in Silicon Dioxide
    Cao, Guiming
    Liu, Xiaorong
    Zhang, Yantao
    Liu, Weihua
    Deng, Minming
    Chen, Guangbing
    Zhang, Guohe
    Li, Quanfu
    Beka, Lemu Girma
    Li, Xin
    Wang, Xiaoli
    ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (12) : 12170 - 12178
  • [32] A Hysteresis-free High-k Dielectric and Contact Resistance Considerations for Graphene Field Effect Transistors
    Vaziri, S.
    Ostling, M.
    Lemme, M. C.
    ULSI PROCESS INTEGRATION 7, 2011, 41 (07): : 165 - 171
  • [33] Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors
    Park, Saungeun
    Lee, Sangchul
    Mordi, Greg
    Jandhyala, Srikar
    Ha, Min-Woo
    Lee, Jang-Sik
    Colombo, Luigi
    Wallace, Robert M.
    Lee, Byoung Hun
    Kim, Jiyoung
    IEEE ELECTRON DEVICE LETTERS, 2014, 35 (02) : 277 - 279
  • [34] Hysteresis analysis of MoS2 Field Effect Transistors
    Toral-Lopez, Alejandro
    Schneider, Daniel S.
    Reato, Eros
    Marin, Enrique G.
    Pasadas, Francisco
    Wang, Zhenxing
    Lemme, Max C.
    Godoy, Andres
    2021 SILICON NANOELECTRONICS WORKSHOP (SNW), 2021, : 73 - 74
  • [35] PSpice Model for Hysteresis in Pentacene Field-Effect Transistors
    Ucurum, C.
    Siemund, H.
    Goebel, H.
    2008 IEEE CONFERENCE ON POLYMERS AND ADHESIVES IN MICROELECTRONICS AND PHOTONICS AND 2008 IEEE INTERDISCIPLINARY CONFERENCE ON PORTABLE INFORMATION DEVICES, 2008, : 212 - 214
  • [36] Characteristics and mechanisms of hysteresis in polymer field-effect transistors
    Paasch, G.
    Scheinert, S.
    Herasimovich, A.
    Hoerselmann, I.
    Lindner, Th.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (03): : 534 - 548
  • [37] Hysteresis in graphene nanoribbon field-effect devices
    Tries, Alexander
    Richter, Nils
    Chen, Zongping
    Narita, Akimitsu
    Muellen, Klaus
    Wang, Hai, I
    Bonn, Mischa
    Klaeui, Mathias
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2020, 22 (10) : 5667 - 5672
  • [38] Effect of energetic electron irradiation on graphene and graphene field-effect transistors
    Childres, Isaac
    Foxe, Michael
    Jovanovic, Igor
    Chen, Yong P.
    MICRO- AND NANOTECHNOLOGY SENSORS, SYSTEMS, AND APPLICATIONS III, 2011, 8031
  • [39] Hysteresis of In Situ CCVD Grown Graphene Transistors
    Wessely, P. J.
    Wessely, F.
    Birinci, E.
    Riedinger, B.
    Schwalke, U.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012, 15 (04) : K31 - K34
  • [40] Total ionizing dose effect on graphene field effect transistors
    Li, Ji-fang
    Guo, Hong-Xia
    Ma, Wu-ying
    Song, Hong-jia
    Zhong, Xiang-li
    Zhang, Feng-qi
    Li, Yangfan
    Bai, Ruxue
    Lu, Xiaojie
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2024, 84 (12) : 934 - 940
12345