Hysteresis modeling in graphene field effect transistors

被引：9

作者：

Winters, M. ^{[1
]}

Sveinbjornsson, E. O. ^{[2
]}

Rorsman, N. ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

[2] Univ Iceland, Inst Sci, IS-107 Reykjavik, Iceland

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 07期

关键词：

ELECTRONIC TRANSPORT;

D O I：

10.1063/1.4913209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Graphene field effect transistors with an Al2O3 gate dielectric are fabricated on H-intercalated bilayer graphene grown on semi-insulating 4H-SiC by chemical vapour deposition. DC measurements of the gate voltage nu(g) versus the drain current i(d) reveal a severe hysteresis of clockwise orientation. A capacitive model is used to derive the relationship between the applied gate voltage and the Fermi energy. The electron transport equations are then used to calculate the drain current for a given applied gate voltage. The hysteresis in measured data is then modeled via a modified Preisach kernel. (C) 2015 AIP Publishing LLC.

引用

页数：9

共 50 条

[21] Linearity of graphene field-effect transistors
Jenkins, K. A.
Farmer, D. B.
Han, S. -J.
Dimitrakopoulos, C.
Oida, S.
Valdes-Garcia, A.
APPLIED PHYSICS LETTERS, 2013, 103 (17)
[22] Graphene nanoribbon field-effect transistors
Thornhill, Stephen
Wu, Nathanael
Wang, Z. F.
Shi, Q. W.
Chen, Jie
PROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10, 2008, : 169 - +
[23] Graphene nanoribbon tunneling field effect transistors
Mohamadpour, Hakimeh
Asgari, Asghar
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2012, 46 : 270 - 273
[24] Modeling of Armchair Graphene Nanoribbon Tunnel Field Effect Transistors for Low Power Applications
Suhendi, E.
Hasanah, L.
Noor, F. A.
Kurniasih, N.
Khairurrijal
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2019, 19 (04) : 336 - 346
[25] Static Nonlinearity in Graphene Field Effect Transistors
Rodriguez, Saul
Smith, Anderson
Vaziri, Sam
Ostling, Mikael
Lemme, Max C.
Rusu, Ana
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (08) : 3001 - 3003
[26] High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors
Deng, Marina
Fadil, Dalal
Wei, Wei
Pallecchi, Emiliano
Happy, Henri
Dambrine, Gilles
De Matos, Magali
Zimmer, Thomas
Fregonese, Sebastien
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2020, 68 (06) : 2116 - 2123
[27] Radiation Hardened Graphene Field Effect Transistors
Alexandrou, Konstantinos
Masurkar, Amrita
Edrees, Hassan
Wishart, James F.
Hao, Yufeng
Petrone, Nicholas
Hone, James
Kymissis, Ioannis
2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2016,
[28] Output Characteristics of Graphene Field Effect Transistors
Mishchenka, V. N.
DEVICES AND METHODS OF MEASUREMENTS, 2020, 11 (04): : 298 - 304
[29] Empirical Modeling of Metal-Contact Effects on Graphene Field-Effect Transistors
Nouchi, Ryo
Tanigaki, Katsumi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (07)
[30] Terahertz Rectification by Graphene Field Effect Transistors
Coquillat, D.
Dyakonova, N.
Goiran, M.
Vitiello, M. S.
Vicarelli, L.
Poumirol, J. M.
Escoffier, W.
Raquet, B.
But, D.
Teppe, F.
Pellegrini, V.
Tredicucci, A.
Knap, W.
2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2012,

← 1 2 3 4 5 →