Anisotropic misfit dislocation nucleation in two-dimensional grown InAs/GaAs(001) heterostructures

被引：14
|
作者：
Trampert, A
Klaus, H
Tournie, E
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
[2] CNRS, Ctr Rech Heteroepitxie & Applicat, F-06560 Valbonne, France
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 08期
关键词：
D O I：
10.1063/1.122088
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on structural investigations of the plastic strain relief in the highly mismatched InAs/GaAs(001) system grown in the layer-by-layer growth mode. The misfit dislocation generation mechanism is observed to be anisotropic in the two perpendicular [110] directions. We explain this result by the interplay between the chemically inequivalent dislocation types present in compound semiconductors and the applied growth condition. (C) 1998 American Institute of Physics. [S0003-6951(98)00334-9].
引用
收藏
页码：1074 / 1076
页数：3
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