Anisotropic misfit dislocation nucleation in two-dimensional grown InAs/GaAs(001) heterostructures

被引：14
|
作者：
Trampert, A
Klaus, H
Tournie, E
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
[2] CNRS, Ctr Rech Heteroepitxie & Applicat, F-06560 Valbonne, France
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 08期
关键词：
D O I：
10.1063/1.122088
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on structural investigations of the plastic strain relief in the highly mismatched InAs/GaAs(001) system grown in the layer-by-layer growth mode. The misfit dislocation generation mechanism is observed to be anisotropic in the two perpendicular [110] directions. We explain this result by the interplay between the chemically inequivalent dislocation types present in compound semiconductors and the applied growth condition. (C) 1998 American Institute of Physics. [S0003-6951(98)00334-9].
引用
收藏
页码：1074 / 1076
页数：3
相关论文
共 50 条
  • [31] Critical thickness for misfit dislocation formation in InAs/GaAs(110) heteroepitaxy
    Plans, I.
    Carpio, A.
    Bonilla, L. L.
    Caflisch, R. E.
    PROGRESS IN INDUSTRIAL MATHEMATICS AT ECMI 2006, 2008, 12 : 381 - +
  • [32] Interfacial stability and misfit dislocation formation in InAs/GaAs(100) heteroepitaxy
    Zepeda-Ruiz, LA
    Maroudas, D
    Weinberg, WH
    THIN-FILMS - STRESSES AND MECHANICAL PROPERTIES VII, 1998, 505 : 191 - 196
  • [33] Interfacial stability and misfit dislocation formation in InAs/GaAs(110) heteroepitaxy
    Maroudas, D
    Zepeda-Ruiz, LA
    Weinberg, WH
    SURFACE SCIENCE, 1998, 411 (03) : L865 - L871
  • [34] ATOMISTIC STUDY OF DISLOCATION NUCLEATION IN GE/(001)SI HETEROSTRUCTURES
    ICHIMURA, M
    NARAYAN, J
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1995, 72 (02): : 281 - 295
  • [35] Morphological characterization and strain release of GaAs/InAs(001) heterostructures
    Attolini, G
    Chimenti, E
    Franzosi, P
    Gennari, S
    Pelosi, C
    Lottici, PP
    APPLIED PHYSICS LETTERS, 1996, 69 (07) : 957 - 959
  • [36] Morphological characterization and strain release of GaAs/InAs (001) heterostructures
    Appl Phys Lett, 7 (957):
  • [37] Misfit-Dislocation Induced Surface Morphology of InGaAs/GaAs Heterostructures
    Oksana Yastrubchak
    Tadeusz Wosiński
    Elżbieta Łusakowska
    Tadeusz Figielski
    Attila L. Tóth
    Microchimica Acta, 2004, 145 : 267 - 270
  • [38] Misfit-dislocation induced surface morphology of InGaAs/GaAs heterostructures
    Yastrubchak, O
    Wosinski, T
    Lusakowska, E
    Figielski, T
    Tóth, AL
    MICROCHIMICA ACTA, 2004, 145 (1-4) : 267 - 270
  • [39] Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth
    Nufris, S
    Arciprete, F
    Patella, F
    Placidi, E
    Fanfoni, M
    Sgarlata, A
    Balzarotti, A
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, 2003, (180): : 195 - 198
  • [40] Effect of the growth mode on the two- to three-dimensional transition of InAs grown on vicinal GaAs(001) substrates
    Wu, J.
    Jiao, Y. H.
    Jin, P.
    Lv, X. J.
    Wang, Z. G.
    NANOTECHNOLOGY, 2007, 18 (26)
12345