Effect of the growth mode on the two- to three-dimensional transition of InAs grown on vicinal GaAs(001) substrates

被引：6
|
作者：
Wu, J. [1 ]
Jiao, Y. H. [1 ]
Jin, P. [1 ]
Lv, X. J. [1 ]
Wang, Z. G. [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
NANOTECHNOLOGY | 2007年 / 18卷 / 26期
关键词：
D O I：
10.1088/0957-4484/18/26/265304
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Some differences were observed between conventional molecular-beam epitaxy (MBE) and mobility enhanced epitaxy (MEE) of InAs on a vicinal GaAs(001) substrate in the variation of the number density N of the InAs islands, with additional InAs coverage (theta - theta(c)) after the critical InAs coverage theta(c) during the two- to three-dimensional (2D-3D) transition. For MBE the variation was consistent with the power law N(theta) (theta similar to theta(c))(alpha); while for MEE, the linear relation N(theta) proportional to (theta - theta(c)) was observed. The difference is discussed in terms of the randomness in the nucleation of the InAs islands.
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页数：4
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