How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001)

被引：31
|
作者：
Arciprete, F. [1 ]
Placidi, E. [1 ]
Sessi, V. [1 ]
Fanfoni, M. [1 ]
Patella, F. [1 ]
Balzarotti, A. [1 ]
机构：
[1] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 04期
关键词：
D O I：
10.1063/1.2234845
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The two- to three-dimensional growth mode transition in the InAs/GaAs(001) heterostructure has been investigated by means of atomic force microscopy. The kinetics of the density of three-dimensional islands indicates two transition onsets at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large dots. According to the scaling analysis and volume measurements, the transition between the two families of quantum dots and the explosive nucleation of the large ones is triggered by the erosion of the step edges. (c) 2006 American Institute of Physics.
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页数：3
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