How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001)

被引：31
|
作者：
Arciprete, F. [1 ]
Placidi, E. [1 ]
Sessi, V. [1 ]
Fanfoni, M. [1 ]
Patella, F. [1 ]
Balzarotti, A. [1 ]
机构：
[1] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 04期
关键词：
D O I：
10.1063/1.2234845
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The two- to three-dimensional growth mode transition in the InAs/GaAs(001) heterostructure has been investigated by means of atomic force microscopy. The kinetics of the density of three-dimensional islands indicates two transition onsets at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large dots. According to the scaling analysis and volume measurements, the transition between the two families of quantum dots and the explosive nucleation of the large ones is triggered by the erosion of the step edges. (c) 2006 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Computer simulation of electron energy states for three-dimensional InAs/GaAs semiconductor quantum rings
    Li, Yiming
    Voskoboynikov, O.
    Lee, C. P.
    [J]. ICCN 2002: INTERNATIONAL CONFERENCE ON COMPUTATIONAL NANOSCIENCE AND NANOTECHNOLOGY, 2002, : 431 - 434
  • [32] Two- and three-dimensional arrays of nanoscale as clusters in low-temperature grown GaAs
    Bert, NA
    Cherkashin, NA
    Chaldyshev, VV
    Claverie, A
    Preobrazhenskii, VV
    Putyato, MA
    Sernyagin, BR
    Werner, P
    [J]. 2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, 2002, : 233 - 236
  • [33] Nature of the transition from two- to three-dimensional ordering in a confined colloidal suspension
    Zangi, R
    Rice, SA
    [J]. PHYSICAL REVIEW E, 2000, 61 (01): : 660 - 670
  • [34] Microscopic theory of vertical-transport phenomena in semiconductor heterostructures: Interplay between two- and three-dimensional hot-carrier relaxation
    Barbieri, S
    Beltram, F
    Rossi, F
    [J]. PHYSICAL REVIEW B, 1999, 60 (03): : 1953 - 1963
  • [35] Uniform formation of two-dimensional and three-dimensional InAs islands on GaAs by molecular beam epitaxy
    Kaizu, T
    Yamaguchi, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4A): : 1705 - 1708
  • [36] Suppression of Three-Dimensional Pit Formation of InAs on GaSb(001) by Two-Step MBE
    Okumura, Shigekazu
    Suzuki, Ryo
    Tsunoda, Koji
    Nishino, Hironori
    Sugiyama, Masakazu
    [J]. 2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
  • [37] Shape transition of InAs from two-dimensional islands to three-dimensional dots by annealing
    Iwasaki, S
    Yamaguchi, K
    [J]. APPLIED SURFACE SCIENCE, 2003, 216 (1-4) : 407 - 412
  • [38] Atomic structure of faceted planes of three-dimensional InAs islands on GaAs(001) studied by scanning tunneling microscope
    Hasegawa, Y
    Kiyama, H
    Xue, QK
    Sakurai, T
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (18) : 2265 - 2267
  • [39] Photoluminescence of the three-dimensional and two-dimensional carries in the N-AlGaAs/GaAs-heterostructures
    Gulyaev, YV
    Mokerov, VG
    Guk, AV
    Fedorov, YV
    Khabarov, YV
    [J]. DOKLADY AKADEMII NAUK, 1996, 348 (01) : 42 - 44
  • [40] Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers
    Shaleev, M. V.
    Novikov, A. V.
    Yurasov, D. V.
    Hartmann, J. M.
    Kuznetsov, O. A.
    Lobanov, D. N.
    Krasilnik, Z. F.
    [J]. SEMICONDUCTORS, 2013, 47 (03) : 427 - 432
12345