Shape transition of InAs from two-dimensional islands to three-dimensional dots by annealing

被引：2
|
作者：
Iwasaki, S [1 ]
Yamaguchi, K [1 ]
机构：
[1] Univ Electrocommun, Dept Elect Engn, Chofu, Tokyo 1828585, Japan
来源：
APPLIED SURFACE SCIENCE | 2003年 / 216卷 / 1-4期
关键词：
self-assembled quantum dots; Stranski-Krastanov growth; annealing; critical thickness; multi-nucleation;
D O I：
10.1016/S0169-4332(03)00382-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Three-dimensional (3D) InAs dots were formed from 2D layers by annealing. Critical thickness (CT) of 2D-3D transition due to annealing was studied, and it was found that this shape transition depends on the growth condition of the 2D InAs layers, which changes the surface structure of the 2D layers. The formation mechanism of the 3D dots was kinetically explained by desorption of indium species from step edges and their aggregation near the steps. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：407 / 412
页数：6
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