Investigation of the SiC/(SiC)1-x(AlN)x heterostructures by the method of capacitance-voltage characteristics

被引：1

作者：

Kurbanov, MK ^{[1
]}

Bilalov, BA ^{[1
]}

Nurmagomedov, SA ^{[1
]}

Safaraliev, GK ^{[1
]}

机构：

[1] Dagestan State Univ, Makhachkala 327025, Dagestan, Russia

来源：

SEMICONDUCTORS | 2001年 / 35卷 / 02期

关键词：

Magnetic Material; Basic Property; Electromagnetism; Sublimation Epitaxy; Abrupt Heterojunctions;

D O I：

10.1134/1.1349934

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using the method of measuring and analyzing the capacitance-voltage characteristics, it is found that the n-6H-SiC/p-(SiC)(1-x)(AlN)(x) heterostructures obtained by sublimation epitaxy of the (SiC)(1-x)(AlN)(x) layers on the 6H-SiC substrates have abrupt heterojunctions similar to 10(-4) cm thick. The basic properties of heterostructures, which depend on the epilayer composition and temperature, were determined from the capacitance-voltage characteristics. (C) 2001 MAIK "Nauka/Interperiodica".

引用

页码：209 / 211

页数：3

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