Investigation of the SiC/(SiC)1-x(AlN)x heterostructures by the method of capacitance-voltage characteristics

被引：1
|
作者：
Kurbanov, MK [1 ]
Bilalov, BA [1 ]
Nurmagomedov, SA [1 ]
Safaraliev, GK [1 ]
机构：
[1] Dagestan State Univ, Makhachkala 327025, Dagestan, Russia
来源：
SEMICONDUCTORS | 2001年 / 35卷 / 02期
关键词：
Magnetic Material; Basic Property; Electromagnetism; Sublimation Epitaxy; Abrupt Heterojunctions;
D O I：
10.1134/1.1349934
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Using the method of measuring and analyzing the capacitance-voltage characteristics, it is found that the n-6H-SiC/p-(SiC)(1-x)(AlN)(x) heterostructures obtained by sublimation epitaxy of the (SiC)(1-x)(AlN)(x) layers on the 6H-SiC substrates have abrupt heterojunctions similar to 10(-4) cm thick. The basic properties of heterostructures, which depend on the epilayer composition and temperature, were determined from the capacitance-voltage characteristics. (C) 2001 MAIK "Nauka/Interperiodica".
引用
收藏
页码：209 / 211
页数：3
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