Capacitance-voltage characteristics of heterostructures with high leakage currents

被引：0
|
作者：
Goldenblum, A. [1 ]
Stancu, V. [1 ]
Buda, M. [1 ]
Iordache, G. [1 ]
Pintilie, I. [1 ]
Negrila, C. [1 ]
Botila, T. [1 ]
机构：
[1] National Institute of Materials Physics, Str. Atomistilor 105bis, 077125 Bucharest-Magurele, Romania
来源：
Journal of Applied Physics | 2008年 / 103卷 / 05期
关键词：
5;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [1] Capacitance-voltage characteristics of heterostructures with high leakage currents
    Goldenblum, A.
    Stancu, V.
    Buda, M.
    Iordache, G.
    Pintilie, I.
    Negrila, C.
    Botila, T.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (05)
  • [2] Capacitance-voltage characteristics of ZnO/GaN heterostructures
    Oh, DC
    Suzuki, T
    Kim, JJ
    Makino, H
    Hanada, T
    Yao, T
    Ko, HJ
    APPLIED PHYSICS LETTERS, 2005, 87 (16) : 1 - 3
  • [3] CAPACITANCE-VOLTAGE CHARACTERISTICS OF GAAS-ALAS HETEROSTRUCTURES
    WOODWARD, TK
    SCHLESINGER, TE
    MCGILL, TC
    BURNHAM, RD
    APPLIED PHYSICS LETTERS, 1985, 47 (06) : 631 - 633
  • [4] Frequency dispersion in capacitance-voltage characteristics of AlGaN/GaN heterostructures
    Shealy, James R.
    Brown, Richard J.
    APPLIED PHYSICS LETTERS, 2008, 92 (03)
  • [5] RF Capacitance-Voltage characterization of MOSFETs with high leakage dielectrics
    Schmitz, J
    Cubaynes, FN
    Havens, RJ
    de Kort, R
    Scholten, AJ
    Tiemeijer, LF
    IEEE ELECTRON DEVICE LETTERS, 2003, 24 (01) : 37 - 39
  • [6] CAPACITANCE-VOLTAGE CHARACTERISTICS OF SELECTIVELY DOPED HETEROSTRUCTURES CONTAINING DEEP CENTERS
    GOREV, NB
    MAKAROV, TV
    PROKHOROV, EF
    UKOLOV, AT
    EPPEL, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (07): : 748 - 749
  • [7] Influence of deep levels on capacitance-voltage characteristics of AlGaN/GaN heterostructures
    Osvald, J.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (07)
  • [8] CAPACITANCE-VOLTAGE CHARACTERISTICS OF MULTIPLE-QUANTUM-WELL SEMICONDUCTOR HETEROSTRUCTURES
    ERSHOV, M
    RYZHII, V
    SAITO, K
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1995, 28 (10) : 2118 - 2122
  • [9] CAPACITANCE-VOLTAGE CHARACTERISTICS GAUGE
    GREBENNIKOV, AA
    SUKHAREV, YG
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1976, 19 (02) : 598 - 598
  • [10] CAPACITANCE-VOLTAGE CHARACTERISTICS OF SUPERLATTICES
    ALESHKIN, VY
    ZVONKOV, BN
    LINKOVA, ER
    MUREL, AV
    ROMANOV, YA
    SEMICONDUCTORS, 1993, 27 (06) : 504 - 507
12345