CAPACITANCE-VOLTAGE CHARACTERISTICS OF SUPERLATTICES

被引：0
|
作者：
ALESHKIN, VY
ZVONKOV, BN
LINKOVA, ER
MUREL, AV
ROMANOV, YA
机构：
来源：
SEMICONDUCTORS | 1993年 / 27卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Capacitance-voltage characteristics of a Schottky contact have been determined for a structure with a periodic sequence of quantum wells separated by tunnel-opaque barriers. At low temperatures the voltage dependence of the capacitance was found to be stepped with a constant jump of the reciprocal capacitance. A method for finding the surface density of electrons in quantum wells from the capacitance-voltage characteristics has been proposed. It was found that penetration of the electric field from the schottky barrier into the structure could have an oscillatory coordinate dependence.
引用
收藏
页码：504 / 507
页数：4
相关论文
共 50 条
12345