Growth of epitaxial (SiC)x(AlN)1-x thin films on 6H-SiC by ion-assisted dual magnetron sputter deposition

被引：0
|
作者：
Tungasmita, S [1 ]
Persson, POÅ [1 ]
Seppänen, T [1 ]
Hultman, L [1 ]
Birch, J [1 ]
机构：
[1] Linkoping Univ, Thin Film Phys Div, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
AlN; epitaxial; SiC; sputter; thin film;
D O I：
10.4028/www.scientific.net/MSF.389-393.1481
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
(SiC)(X)(AIN)(1-X) thin films have been grown epitaxially on vicinal 6H-SiC (0001) by low-energy ion assisted dual magnetron sputtering in UHV conditions. AES showed a decreasing Si and C content for an increasing magnetron power ratio, (P-Al/P-SiC). The epitaxial quality of the films was improved as the SiC fraction increased. Films containing less than 5% of Si and C show an evolution of domain width similar to the growth of pure AIN. HRXRD show a decreased c-axis lattice parameter for a film with composition of AINC(X) (0less than or equal toxless than or equal to0.1), indicating carbon substitution in AIN. CL spectra show defect-related peaks of similar to3.87 and similar to4.70 eV, corresponding to O and C impurities respectively as well as on un-identified peak at similar to3.40 eV.
引用
收藏
页码：1481 / 1484
页数：4
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