Growth of epitaxial (SiC)x(AlN)1-x thin films on 6H-SiC by ion-assisted dual magnetron sputter deposition

被引：0

作者：

Tungasmita, S ^{[1
]}

Persson, POÅ ^{[1
]}

Seppänen, T ^{[1
]}

Hultman, L ^{[1
]}

Birch, J ^{[1
]}

机构：

[1] Linkoping Univ, Thin Film Phys Div, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

AlN; epitaxial; SiC; sputter; thin film;

D O I：

10.4028/www.scientific.net/MSF.389-393.1481

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(SiC)(X)(AIN)(1-X) thin films have been grown epitaxially on vicinal 6H-SiC (0001) by low-energy ion assisted dual magnetron sputtering in UHV conditions. AES showed a decreasing Si and C content for an increasing magnetron power ratio, (P-Al/P-SiC). The epitaxial quality of the films was improved as the SiC fraction increased. Films containing less than 5% of Si and C show an evolution of domain width similar to the growth of pure AIN. HRXRD show a decreased c-axis lattice parameter for a film with composition of AINC(X) (0less than or equal toxless than or equal to0.1), indicating carbon substitution in AIN. CL spectra show defect-related peaks of similar to3.87 and similar to4.70 eV, corresponding to O and C impurities respectively as well as on un-identified peak at similar to3.40 eV.

引用

页码：1481 / 1484

页数：4

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