Influence of nitrogen in ultra-thin SiON on negative bias temperature instability under AC stress

被引：55
|
作者：
Mitani, Y [1 ]
机构：
[1] Toshiba Co Ltd, Adv LSI Technol Lab, Inage Ku, Yokohama, Kanagawa 2358522, Japan
来源：
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年
关键词：
D O I：
10.1109/IEDM.2004.1419082
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In order to clarify the effect of nitrogen incorporation on negative bias temperature instability (NBTI), V-TH degradations and its recoveries for NO-SiON and N-plasma SiON has been investigated. As a result, recovery of NBT degradation is more difficult for N-plasma SiON than for NO-SiON. This result indicates that nitrogen atoms have an effect on the "lock-in" of hydrogen or hydrogen-related species. Furthermore, on the basis of the analysis of DeltaV(TH) under DC stress, we also tried to predict the NBT degradation under AC stress.
引用
收藏
页码：117 / 120
页数：4
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