Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots

被引：5
|
作者：
Gong, Z [1 ]
Fang, ZD [1 ]
Xu, XH [1 ]
Miao, ZH [1 ]
Niu, ZC [1 ]
Feng, SL [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Micorstruct, Beijing 100083, Peoples R China
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2003年 / 15卷 / 31期
关键词：
D O I：
10.1088/0953-8984/15/31/305
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have investigated the effect of different cap layers on the photoluminescence (PL) of self-assembled InAs/GaAs quantum dots (QDs). Based upon different cap layers, the wavelength of InAs QDs can be tuned to the range from 1.3 to 1.5 mum. An InAlAs and InGaAs combination layer can enlarge the energy separation between the ground and first excited radiative transition. GaAs/InAs short period superlattices (SLs) make the emission wavelength shift to 1.53 mum. The PL intensity of InAs QDs capped with GaAs/InAs SLs shows an anomalous increase with increasing temperature. We attribute this to the transfer of carriers between different QDs.
引用
收藏
页码：5383 / 5388
页数：6
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