In as a surfactant for the growth of AlGaN/GaN heterostructures by plasma assisted MBE

被引：0

作者：

Monroy, E ^{[1
]}

Gogneau, N ^{[1
]}

Bellet-Amalric, E ^{[1
]}

Enjalbert, F ^{[1
]}

Barjon, J ^{[1
]}

Jalabert, D ^{[1
]}

Brault, J ^{[1
]}

Dang, LS ^{[1
]}

Daudin, B ^{[1
]}

机构：

[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 9, France

来源：

GAN AND RELATED ALLOYS-2002 | 2003年 / 743卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we study the surfactant capability of In for the growth of AlGaN/GaN heterostructures by plasma-assisted molecular beam epitaxy. Growth conditions were determined to have a self-regulated 1x1 In adlayer on AlxGa1-xN (0001). The presence of this In film favors two dimensional growth of AlGaN under stoichiometric conditions, and inhibits the formation of metal droplets on the surface. The quality of these layers was assessed by high resolution X-ray diffraction, atomic force microscopy and photoluminescence.

引用

页码：369 / 374

页数：6

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