MBE-grown AlGaN/GaN heterostructures for UV photodetectors

被引：0

作者：

T. V. Malin

A. M. Gilinskii

V. G. Mansurov

D. Yu. Protasov

A. K. Shestakov

E. B. Yakimov

K. S. Zhuravlev

机构：

[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch

[2] Russian Academy of Sciences,Institute of Microelectronics Technology and High Purity Materials

来源：

Technical Physics | 2015年 / 60卷

关键词：

Buffer Layer; Reflect High Energy Electron Diffraction; AlGaN Layer; Multilayered Heterostructures; Epitaxial Heterostructure;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The MBE synthesis of AlGaN/GaN semiconductor heterostructures intended for UV photodetectors is considered. A technique for growing AlGaN layers and multilayered heterostructures is developed. It includes the nitridization of the sapphire substrate surface, the formation of a seed layer, and the growth of a buffer layer and undoped and doped AlGaN layers of different composition. The influence of growth conditions on the surface morphology, density of threading dislocations and other structural defects, and electrophysical and optical properties of individual AlGaN layers and respective heterostructures for UV photodetectors is investigated. The mathematical simulation of p-i-n photodiodes is made, and a process route for fabrication of AlGaN heterostructures is developed. Test AlGaN p-i-n photodiodes are prepared, and their performance is investigated.

引用

页码：546 / 552

页数：6

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