Properties of homoepitaxially MBE-grown GaN

被引：1
|
作者：
Suski, T
Krueger, J
Kisielowski, C
Phatak, P
Leung, MSH
LilientalWeber, Z
Gassmann, A
Newman, N
Rubin, MD
Weber, ER
Grzegory, I
Jun, J
Bockowski, M
Porowski, S
Helava, HI
机构：
来源：
III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES | 1996年 / 423卷
关键词：
D O I：
10.1557/PROC-423-329
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bulk single crystals of GaN were used for epitaxial growth of GaN films by molecular beam epitaxy. Low temperature photoluminescence yields much higher intensity emission in the near bandedge region for epitaxial films with respect to the situation in bulk crystals. Character of this luminescence changes also. Dominant band-to-band transitions in the bulk crystals are exchanged by bound exciton and/or donor-acceptor pair transitions observed in the epitaxial layers. We will compare the obtained results with the available data on the homoepitaxial samples grown by metalorganic chemical vapor deposition method and discuss the importance of establishing the basic information on energetic positions of excitonic transitions in stress free samples.
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页码：329 / 334
页数：6
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