MBE-grown AlGaN/GaN heterostructures for UV photodetectors

被引：0

作者：

T. V. Malin

A. M. Gilinskii

V. G. Mansurov

D. Yu. Protasov

A. K. Shestakov

E. B. Yakimov

K. S. Zhuravlev

机构：

[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch

[2] Russian Academy of Sciences,Institute of Microelectronics Technology and High Purity Materials

来源：

Technical Physics | 2015年 / 60卷

关键词：

Buffer Layer; Reflect High Energy Electron Diffraction; AlGaN Layer; Multilayered Heterostructures; Epitaxial Heterostructure;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The MBE synthesis of AlGaN/GaN semiconductor heterostructures intended for UV photodetectors is considered. A technique for growing AlGaN layers and multilayered heterostructures is developed. It includes the nitridization of the sapphire substrate surface, the formation of a seed layer, and the growth of a buffer layer and undoped and doped AlGaN layers of different composition. The influence of growth conditions on the surface morphology, density of threading dislocations and other structural defects, and electrophysical and optical properties of individual AlGaN layers and respective heterostructures for UV photodetectors is investigated. The mathematical simulation of p-i-n photodiodes is made, and a process route for fabrication of AlGaN heterostructures is developed. Test AlGaN p-i-n photodiodes are prepared, and their performance is investigated.

引用

页码：546 / 552

页数：6

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[31] Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well
Kamata, N
Klausing, H
Fedler, F
Mistele, D
Aderhold, J
Semchinova, OK
Graul, J
Someya, T
Arakawa, Y
[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 27 (1-3): : 271 - 273
[32] Raman scattering and photoluminescence properties of MBE-grown GaN on sapphire
Jiang, DS
Ramsteiner, M
Ploog, K
Tews, H
Graber, A
Riechert, H
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1998, 146 (1-4): : 99 - 111
[33] In as a surfactant for the growth of AlGaN/GaN heterostructures by plasma assisted MBE
Monroy, E
Gogneau, N
Bellet-Amalric, E
Enjalbert, F
Barjon, J
Jalabert, D
Brault, J
Dang, LS
Daudin, B
[J]. GAN AND RELATED ALLOYS-2002, 2003, 743 : 369 - 374
[34] Characterization of AlGaN/GaN HEMT devices grown by MBE
MacElwee, TW
Bardwell, JA
Tang, H
Webb, JB
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[35] 0.25 μm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT
Kumar, V
Lu, W
Schwindt, R
Van Hove, J
Chow, P
Adesida, I
[J]. ELECTRONICS LETTERS, 2001, 37 (13) : 858 - 859
[36] TEM and PL characterisation of MBE-grown epitaxial GaN/GaAs
Xin, Y
Brown, PD
Boothroyd, CB
Preston, AR
Humphreys, CJ
Cheng, TS
Foxon, CT
Andrianov, AV
Orton, JW
[J]. III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 311 - 316
[37] Dislocation free AlGaN/GaN MQW grown on GaN substrates by MBE
Porowski, S
Grzegory, I
Bockowski, M
Leszczynski, M
Korakakis, D
Bell, A
Harrison, I
Foxon, CT
Albrecht, M
Strunk, HP
Davidson, JA
Dawson, P
[J]. BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 443 - 444
[38] The effect of Al in plasma-assisted MBE-grown GaN
Zsebök, O
Thordson, JV
Zhao, QX
Södervall, U
Ilver, L
Andersson, TG
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[39] Surface reconstruction and As surfactant effects on MBE-grown GaN epilayers
Okumura, H
Hamaguch, H
Ohta, K
Feuillet, G
Balakrishnan, K
Ishida, Y
Chichibu, S
Nakanishi, H
Nagatomo, T
Yoshida, S
[J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1167 - 1172
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S. I. Petrov
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I. A. Sokolov
M. A. Sokolov
M. V. Stepanov
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A. P. Shkurko
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[J]. Technical Physics Letters, 2005, 31 : 864 - 867

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