Electrical characterisation of GaN and AlGaN layers grown by plasma-assisted MBE

被引：5

作者：

Kolkovsky, V. ^{[1
]}

Scheffler, L. ^{[1
]}

Sobanska, M. ^{[1
]}

Klosek, K. ^{[2
]}

Zytkiewicz, Z. R. ^{[2
]}

Weber, J. ^{[1
]}

机构：

[1] Tech Univ Dresden, Inst Angew Phys, D-01062 Dresden, Germany

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期

关键词：

DLTS; GaN; defects; molecular beam epitaxy; N-GAN; POINT-DEFECTS; BEAM EPITAXY; DEEP LEVELS; DOPED GAN; BAND-GAP; TRAPS; IRRADIATION;

D O I：

10.1002/pssc.201100138

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In the present study GaN and AlxGa1-xN layers (with x below 5%) grown by plasma-assisted MBE (PAMBE) were investigated by deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. In GaN a dominant DLTS peak was observed at about 120 K. Using the high-resolution Laplace DLTS technique we demonstrate that this peak consists of two close components. Defects related to the nitrogen vacancy are the most probable candidates for the origin of these levels. Two other dominant peaks were observed in the DLTS spectra in AlxGa1-xN layers with x=1.4% and x=3%, respectively. The position of the peaks depends on the Al content and shifts towards higher temperatures with Al concentration. The electrical properties of the peaks and their origin will be discussed. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1043 / 1047

页数：5

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