Effects of post-annealing on the microstructure and ferroelectric properties of YMnO3 thin films on Si

被引：12
|
作者：
Yoo, DC
Lee, JY
Kim, IS
Kim, YT
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Yuseong Gu, Taejon 305701, South Korea
[2] Korea Inst Sci & Technol, Semicond Mat Lab, Seoul 136791, South Korea
来源：
JOURNAL OF CRYSTAL GROWTH | 2001年 / 233卷 / 1-2期
关键词：
transmission electron microscopy; yittrium compounds; ferroelectric materials;
D O I：
10.1016/S0022-0248(01)01563-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
YMnO3 thin films deposited on Si (100) substrate by rf-sputtering were annealed with various conditions. YMnO3 films annealed in a furnace had a c-axis preferred orientation and the films annealed in a rapid thermal processor (RTP) had random orientations. However, cracks were observed in the highly c-axis oriented YMnO3 films. YMnO3 films annealed in the furnace showed poor ferroelectric characteristics. However, YMnO3 films annealed in the RTP showed a ferroelectric C-V hysteresis with 1.5 V memory window at 0.2 V/s sweep rate. Since the thermal expansion of a-axis is five times higher than that of c-axis in the YMnO3 thin films, the c-axis oriented thin films are expected to be easily cracked during the post-annealing process. Moreover, the rapid thermal annealing process effectively suppressed the increase of a native SiO2 thickness in the YMnO3/Si structure. (C) 2001 Published by Elsevier Science B.V.
引用
收藏
页码：243 / 247
页数：5
相关论文
共 50 条
  • [41] Dielectric properties of ferroelectric/DMS heterointerface using YMnO3 and Ce doped Si
    Shindo, Daisuke
    Yoshimura, Takeshi
    Fujimura, Norifumi
    [J]. APPLIED SURFACE SCIENCE, 2008, 254 (19) : 6218 - 6221
  • [42] Ferromagnetism in epitaxial orthorhombic YMnO3 thin films
    Marti, X.
    Skumryev, V.
    Cattoni, A.
    Bertacco, R.
    Laukhin, V.
    Ferrater, C.
    Garcia-Cuenca, M. V.
    Varela, M.
    Sanchez, F.
    Fontcuberta, J.
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2009, 321 (11) : 1719 - 1722
  • [43] Dielectric anomalies in orthorhombic YMnO3 thin films
    Fina, I.
    Marti, X.
    Fabrega, L.
    Sanchez, F.
    Fontcuberta, J.
    [J]. THIN SOLID FILMS, 2010, 518 (16) : 4710 - 4713
  • [44] Effects of stoichiometry and A-site substitution on the electrical properties of ferroelectric YMnO3
    Shimura, T
    Fujimura, N
    Yamamori, S
    Yoshimura, T
    Ito, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (9B): : 5280 - 5284
  • [45] Ferroelectric properties of YMnO3 epitaxial films for ferroelectric-gate field-effect transistors
    Ito, D
    Fujimura, N
    Yoshimura, T
    Ito, T
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) : 5563 - 5567
  • [46] Atomic layer deposition of YMnO3 thin films
    Choi, Ju H.
    Pham, Calvin
    Dorman, James
    Kim, Taeseung
    Chang, Jane P.
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2020, 498
  • [47] Ferroelectric properties of YMnO3 epltaxial films for ferroelectric-gate field-effect transistors
    Ito, Daisuke
    Fujimura, Norifumi
    Yoshimura, Takeshi
    Ito, Taichiro
    [J]. 1600, American Institute of Physics Inc. (93):
  • [48] Effect of carrier concentration on the magnetic behavior of ferroelectric YMnO3 ceramics and thin films.
    Fujimura, N
    Yamamori, S
    Nakamoto, A
    Ito, D
    Yokota, T
    Ito, T
    [J]. PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II, 2001, : 625 - 628
  • [49] Resistive switching in polycrystalline YMnO3 thin films
    Bogusz, A.
    Mueller, A. D.
    Blaschke, D.
    Skorupa, I.
    Buerger, D.
    Scholz, A.
    Schmidt, O. G.
    Schmidt, H.
    [J]. AIP ADVANCES, 2014, 4 (10):
  • [50] Effects of the annealing temperature on the microstructure and the electrical properties in SBT ferroelectric thin films
    Cheon, CI
    Min, BW
    Kwong, DL
    Kim, JS
    [J]. INTEGRATED THIN FILMS AND APPLICATIONS, 1998, 86 : 245 - 254
12345