Effects of stoichiometry and A-site substitution on the electrical properties of ferroelectric YMnO3

被引：16
|
作者：
Shimura, T [1 ]
Fujimura, N [1 ]
Yamamori, S [1 ]
Yoshimura, T [1 ]
Ito, T [1 ]
机构：
[1] Univ Osaka Prefecture, Coll Engn, Dept Appl Mat Sci, Sakai, Osaka 5998531, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 9B期
关键词：
YMnO3; rare-earth manganese oxide; nonstoichiometry; grain growth; leakage current; conduction mechanism;
D O I：
10.1143/JJAP.37.5280
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We proposed the use of RMnO3 (R: rare-earth elements) for metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) type ferroelectric random access memories (Ferroelectric RAMs). To decrease the leakage current in this material, the effects of nonstoichiometry and A-site substitution were studied. Current-voltage characteristics revealed that the carriers in the RMnO3 originate in excess oxygen and show Frenkel-Poole-type emission. Significant grain growth was observed in the Mn-rich composition. In particular, Mn-rich YbMnO3 shows the lowest leakage current and the best frequency dependence of dielectric permittivity.
引用
收藏
页码：5280 / 5284
页数：5
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