Ferroelectric properties of YMnO3 epltaxial films for ferroelectric-gate field-effect transistors

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作者：
Ito, Daisuke [1 ]
Fujimura, Norifumi [1 ]
Yoshimura, Takeshi [1 ]
Ito, Taichiro [1 ]
机构：
[1] Dept. of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
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| 1600年 / American Institute of Physics Inc.卷 / 93期
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