Gallium nitride - New material for microwave and optoelectronics

被引:0
|
作者
Jelenski, A [1 ]
机构
[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:A147 / A158
页数:12
相关论文
共 50 条
  • [41] Gallium nitride nanowire probe for near-field scanning microwave microscopy
    Weber, J. C.
    Blanchard, P. T.
    Sanders, A. W.
    Imtiaz, A.
    Wallis, T. M.
    Coakley, K. J.
    Bertness, K. A.
    Kabos, P.
    Sanford, N. A.
    Bright, V. M.
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (02)
  • [42] Development of high-stable contact systems to gallium nitride microwave diodes
    Belyaev, A. E.
    Boltovets, N. S.
    Ivanov, V. N.
    Kapitanchuk, L. M.
    Kladko, V. P.
    Konakova, R. V.
    Kudryk, Ya. Ya.
    Kuchuk, A. V.
    Lytvyn, O. S.
    Milenin, V. V.
    Sheremet, V. N.
    Sveshnikov, Yu. N.
    [J]. SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2007, 10 (04) : 1 - 8
  • [43] Large-signal modeling of microwave gallium nitride-based HFETs
    Drozdovski, NV
    Caverly, RH
    Quinn, MJ
    [J]. APMC 2001: ASIA-PACIFIC MICROWAVE CONFERENCE, VOLS 1-3, PROCEEDINGS, 2001, : 248 - 251
  • [44] Gallium Nitride-Based Heterostructures on Silicon Substrates for Powerful Microwave Transistors
    Ezubchenko, I. S.
    Chernykh, M. Y.
    Andreev, A. A.
    Grishchenko, J. V.
    Chernykh, I. A.
    Zanaveskin, M. L.
    [J]. NANOTECHNOLOGIES IN RUSSIA, 2019, 14 (7-8): : 385 - 388
  • [45] Theoretical prediction of a graphene-like structure of indium nitride: A promising excellent material for optoelectronics
    Peng, Qing
    Sun, Xin
    Wang, Han
    Yang, Yunbo
    Wen, Xiaodong
    Huang, Chen
    Liu, Sheng
    De, Suvranu
    [J]. APPLIED MATERIALS TODAY, 2017, 7 : 169 - 178
  • [46] Guaiazulene revisited: a new material for green-processed optoelectronics
    Bilger, David
    Park, Kwang-Won
    Abdel-Maksoud, Ali
    Andrew, Trisha L.
    [J]. POLYMER CHEMISTRY, 2020, 11 (48) : 7656 - 7661
  • [47] Millimeter-wave gallium nitride maturation of 40nm T3 gallium nitride monolithic microwave integrated circuit process
    Fanning, David
    Corrion, Andrea
    Siddiqi, Georges
    Nadri, Souheil
    Denninghoff, Dan
    Arkun, Erdem
    Dadafshar, Sadaf
    Ramos, Ignacio
    Moyer, Harris
    Fu, Andy
    Carlson, John
    Bharadwaj, Shyam
    [J]. 2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS, 2023, : 141 - 144
  • [48] III-Nitride nanowire optoelectronics
    Zhao, Songrui
    Nguyen, Hieu P. T.
    Kibria, Md. G.
    Mi, Zetian
    [J]. PROGRESS IN QUANTUM ELECTRONICS, 2015, 44 : 14 - 68
  • [49] Hot carrier optoelectronics with titanium nitride
    Doiron, Brock
    Gusken, Nicholas A.
    Lauri, Alberto
    Li, Yi
    Mihai, Andrei
    Matsui, Takayuki
    Bower, Ryan
    Huettenhoffer, Ludwig
    Regoutz, Anna
    Dal Forno, Stefano
    Fearn, Sarah
    Petrov, Peter K.
    Cortes, Emiliano
    Cohen, Lesley F.
    Afford, Neil M.
    Lischner, Johannes
    Petrov, Peter
    Maier, Stefan A.
    Oulton, Rupert F.
    [J]. 2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2020,
  • [50] PICOSECOND OPTOELECTRONICS FOR MICROWAVE APPLICATIONS
    LEE, CH
    [J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 533 : 132 - 135