A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility

被引：33

作者：

Platania, Elisa ^{[1
]}

Chen, Zhiyang ^{[3
]}

Chimento, Filippo ^{[1
]}

Grekov, Alexander E. ^{[3
]}

Fu, Ruiyun ^{[3
]}

Lu, Liqing ^{[3
]}

Raciti, Angelo ^{[1
]}

Hudgins, Jerry L. ^{[2
]}

Mantooth, H. Alan ^{[4
]}

Sheridan, David C. ^{[5
]}

Casady, J. ^{[5
]}

Santi, Enrico ^{[3
]}

机构：

[1] Univ Catania, DIEES ARIEL, I-95125 Catania, Italy

[2] Univ Nebraska, Lincoln, NE 68588 USA

[3] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[4] Univ Arkansas, Fayetteville, AR 72701 USA

[5] SemiS Labs Inc, Starkville, MS 39759 USA

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2011年 / 47卷 / 01期

基金：

美国国家科学基金会;

关键词：

Field-dependent mobility; junction field effect transistor (JFET); physics-based model; silicon carbide (SiC);

D O I：

10.1109/TIA.2010.2090843

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, a physical model for a SiC Junction Field Effect Transistor (JFET) is presented. The novel feature of the model is that the mobility dependence on both temperature and electric field is taken into account. This is particularly important for high-current power devices where the maximum conduction current is limited by drift velocity saturation in the channel. The model equations are described in detail, emphasizing the differences introduced by the field-dependent mobility model. The model is then implemented in Pspice. Both static and dynamic simulation results are given. The results are validated with experimental results under static conditions and under resistive and inductive switching conditions.

引用

页码：199 / 211

页数：13

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