Investigation of NBTI recovery induced by conventional measurements for pMOSFETs with ultra-thin SiON gate dielectrics

被引：2
|
作者：
Jin, Lei [1 ]
Xu, Mingzhen [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
2007 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT | 2007年
关键词：
D O I：
10.1109/IRWS.2007.4469218
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The NBTI recovery induced by conventional measurements and its physical origin are studied. It is demonstrated that, with carefully designed experiments using conventional slow equipments, the measurement induced recovery can be evaluated and investigated. It is re-affirmed that the measurement induced recovery is primarily due to the discharge of bulk traps in ultra-thin SiON. The passivation of interface traps plays a less important role, as compared with discharge of bulk traps.
引用
收藏
页码：38 / 42
页数：5
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