High voltage (3130 V) 4H-SiC lateral p-n diodes on a semiinsulating substrate

被引：11
|
作者：
Huang, Chih-Fang [1 ]
Kuo, Jin-Rong [1 ]
Tsai, Chih-Chung [1 ]
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 01期
关键词：
diode; high voltage; lateral; semiinsulating substrate; superjunction; 4H-SiC;
D O I：
10.1109/LED.2007.910756
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-voltage 4H-SiC lateral p-n diodes based on the superjunction principle are fabricated on a semiinsulating substrate for the first time. Experimental results reveal that the length of the field plates on the cathode side and the location of the anode contact are crucial in obtaining a high breakdown voltage. The BV2/R-on of these devices is 19 MW/cm(2). The best achieved blocking voltage is 3130 V, which is the highest value ever reported on SiC lateral devices.
引用
收藏
页码：83 / 85
页数：3
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