Performance of a high resolution chemically amplified electron beam resist at various beam energies

被引：5

作者：

Yang, D. X. ^{[1
]}

Frommhold, A. ^{[2
]}

McClelland, A. ^{[3
]}

Roth, J. ^{[4
]}

Rosamond, M. ^{[5
]}

Linfield, E. H. ^{[5
]}

Osmond, J. ^{[6
]}

Palmer, R. E. ^{[1
]}

Robinson, A. P. G. ^{[2
]}

机构：

[1] Univ Birmingham, Sch Phys & Astron, Nanoscale Phys Res Lab, Birmingham B15 2TT, W Midlands, England

[2] Univ Birmingham, Sch Chem Engn, Birmingham B15 2TT, W Midlands, England

[3] Irresistible Mat Ltd, Langdon House, Swansea SA1 8QY, W Glam, Wales

[4] Nano C Inc, 33 Southwest Pk, Westwood, MA 02090 USA

[5] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England

[6] ICFO Inst Photon Sci, Mediterranean Technol Pk, Barcelona 08860, Spain

来源：

MICROELECTRONIC ENGINEERING | 2016年 / 155卷

基金：

英国工程与自然科学研究理事会;

关键词：

Electron beam lithography; Molecular resist; Chemically amplification; Electron beam energy; EUV LITHOGRAPHY;

D O I：

10.1016/j.mee.2016.03.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 mu C/cm(2) at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV. (C) 2016 The Authors. Published by Elsevier B.V.

引用

页码：97 / 101

页数：5

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