A DC to 20 GHz Variable Gain Amplifier with Tunable Input Matching in 22 nm FDSOI Technology

被引：0

作者：

Seyyedrezaei, Seyyedmohsen ^{[1
]}

Thayyil, Manu Viswambharan ^{[1
]}

Carta, Corrado ^{[1
]}

Ellinger, Frank ^{[1
]}

机构：

[1] Tech Univ Dresden, Chair Circuit Design & Network Theory, Dresden, Germany

来源：

2021 16TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2021) | 2021年

关键词：

Baseband; Broadband amplifiers; CMOS integrated circuits; Feedback amplifiers; Impedance matching; Inductive peaking; Noise figure; Tunable circuits and devices;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and characterization of a broadband radio-frequency variable-gain baseband amplifier, enhanced with tunable input-impedance matching and implemented in a 22nm fully-depleted silicon-on-insulator technology is presented. The proposed amplifier utilizes the back-gate control of the transistors offered in the technology for gain tuning. Using a tunable nFET-based resistor, the amplifier features an adaptive input impedance and can be matched to various circuits, such as a mixer with low to moderate output impedance to serve as a final stage to drive a 50 Omega load. Measurement results show an achieved gain variability of about 9.2 dB with a maximum gain of 13.7 dB. The designed amplifier obtained a 3 dB bandwidth of nearly 20 GHz covering multiple industrial, scientific and medical (ISM) frequency bands. The circuit consumes a power of 5.3mW from a 1V power supply. The chip area including pads amounts to 0.277mm(2).

引用

页码：181 / 184

页数：4

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