A 5-6 GHz Low-Noise Amplifier with > 65-dB Variable-Gain Control in 22nm FinFET CMOS Technology

被引：0
|
作者：
Yeh, Yi-Shin [1 ]
Lee, Hyung-Jin [1 ]
机构：
[1] Intel Corp, Design Enablement, Hillsboro, OR 97124 USA
来源：
2020 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2020年
关键词：
Low-noise amplifier (LNA); FinFET; CMOS; transformer; attenuator; variable-gain amplifier (VGA);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a 5-6 GHz fully-differential low-noise amplifier in 22-nm FinFET Low-Power CMOS technology. To achieve wide gain control, the three-stage LNA consists of a Tee-type RF attenuator and a current-steering variable-gain amplifier. Three-winding transformers are implemented for input and inter-stage matching to achieve simultaneous noise and power matching. The three-stage LNA provides 30.5-dB gain, 1.9-dB minimum noise figure, -29.2-dBm IP1dB and -19.9-dBm IIP3 at 5.7 GHz, and > 65-dB gain-control range with the total DC power consumption of 39 mW at 1-V supply voltage.
引用
收藏
页码：371 / 374
页数：4
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