A 60 GHz Broadband Low-Noise Amplifier With Variable-Gain Control in 65 nm CMOS

被引：37
|
作者：
Hsieh, Yi-Keng [1 ,2 ]
Kuo, Jing-Lin [2 ,3 ]
Wang, Huei [2 ,3 ]
Lu, Liang-Hung [1 ,2 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[3] Natl Taiwan Univ, Grad Inst Commun Engn, Taipei 10617, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2011年 / 21卷 / 11期
关键词：
Attenuators; broadband; low-noise amplifiers (LNAs); millimeter-wave; positive feedback; variable-gain amplifiers;
D O I：
10.1109/LMWC.2011.2167134
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 60 GHz low-noise amplifier (LNA) implemented in a 65 nm CMOS process is presented. Due to the use of a gain-boosted input stage and binary controlled attenuators, the LNA exhibits a broadband response and four programmable gain levels from 18.9 to 7.9 dB while maintaining impedance matching at the 60 GHz frequency band. The fabricated circuit consumes a dc current of 25 mA from a 1.8 V supply.
引用
收藏
页码：610 / 612
页数：3
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